DDR3

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Kapacita: 4GB Typ: DDR3 Frekvence: 1600MHz Latence: CL11 Napětí: 1,5 V

DDR3 1600MT/s Non-ECC Unbuffered DIMM CL11 2RX8 1.5V 240-pin 4Gbit

KCP316NS8/4 je sjednocení pamětí níže do jedné: Stávající PN Nový PN D51264K110S KC

KCP316SS8/4 je sjednocení pamětí níže do jedné: Stávající PN Nový PN M51264K110S KC

DDR3 1600MT/s Non-ECC Unbuffered DIMM CL11 2RX8 1.35V 240-pin 4Gbit

KCP3L16NS8/4 je sjednocení pamětí níže do jedné: Stávající PN Nový PN D51264KL110S

KCP3L16SD8/8 je sjednocení pamětí níže do jedné: Stávající PN Nový PN M1G64KL110 KC

KCP3L16SS8/4 je sjednocení pamětí níže do jedné: Stávající PN Nový PN M51264KL110S KC

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Transcend JetRam 4GB DDR3 1333MHz, CL9, SO-DIMM, bulk

Dual rankové paměti vhodné do starších desek. Specifikace: *PC3-12800 (1600MHz) dual Data Rate *240-Pin Dual in-line memory module *Non-ECC Unbuffered *2 Rank Double-sided module (dual rank) *7.8US Refresh Interval (8192 CYCLES/64MS) *1.

Transcend SODIMM DDR3 4GB 1600Mhz, CL11, 2Rx8 Capacity: 4GB DRAM: 256Mx8 Description: 4GB DDR3 1600 SO-DIMM 2Rx8

operační paměť SODIMM, DDR3, 1066MHz, 2Rx8, vhodná pro MacBook Pro (13-inch, Late 2011) 1,5 V Specifications: Capacity: 8GB RAM Memory Technology: DDR3 1600 Memory Speed: 1600 MHz DRAM: 512Mx8 Part Number: TS8GJMA324H Description: 8GB DDR3 160

Operační paměť SODIMM, DDR3 16GB KIT(8GBx2), 1066MHz, 2Rx8, vhodná pro MacBook Pro 13-inch, Late 2011 1,5 V Specifications: Capacity: 16GB (2x8GB) RAM Memory Technology: DDR3 1600 Memory Speed: 1600 MHz DRAM: 512Mx8 Part Number: TS16GJMA424H D

operační paměť SODIMM, DDR3, 1066MHz, 1Rx8, vhodná pro MacBook Pro (13-inch, Late 2011) 1,5 V Specifications: Capacity: 4GB RAM Memory Technology: DDR3 1600 Memory Speed: 1600 MHz DRAM: 512Mx8 Part Number: TS4GJMA324H Description: 4GB DDR3 160

Transcend SODIMM DDR3 8GB KIT(4GBx2), 1600MHz 1Rx8 pro Apple iMac operační paměť SODIMM, DDR3 8GB KIT(4GBx2), 1066MHz, 1Rx8 pro Apple iMac (vhodná pro MacBook Pro 13-inch, Late 2011) 1,5 V Specifications: Capacity: 8GB (2x4GB) RAM Memory Technology: D

DDR3-1333 Unbuffer Non-ECC MemoryCL=9 Engineered from the ground up specifically for use in portable computers, Transcend’s notebook modules use the highest grade, brand-name DRAM chips available, which are selected only after passing of our stringe

Transcend paměť 4GB DDR3 SO-DIMM 1333Mhz CL9 2Rx8 DDR3-1333 Unbuffer Non-ECC Memory CL=9 Small form-factor cases and slim notebook enclosures usually come hand-in-hand with tightly spaced components with limited room for heat dissipation. Transcend's DD

Transcend's DDR3 Low Voltage ECC SO-DIMM offers unparalleled stability and synchronized performance to today's latest high-powered server class computing systems. Operating at a nominal voltage of just 1.35V presents several advantages for the system such

Small form-factor cases and slim notebook enclosures usually come hand-in-hand with tightly spaced components with limited room for heat dissipation. Transcend's DDR3 Low Voltage SO-DIMM operates at a nominal voltage of just 1.35V, which not only reduces

Built to exacting specifications with the finest chips and materials available, Transcend memory modules undergo strenuous laboratory testing to ensure the best performance possible. Transcend DDR3 Low Voltage DIMMs operate at a nominal voltage of just 1.

Offering the best combination of reliability, speed and stability, Transcend's DDR3 DIMMs are built with the highest quality brand-name DRAM chips available, and are rigorously tested to ensure they meet Transcend's s